SURFACE CHARACTERISTICS OF THICK, FREE-STANDING DIAMOND FILM PREPARED BY CHEMICAL ETCHING AND RAPID THERMAL PROCESSING

Bohr-Ran Huang, Kian Ping Loh (), Jung-Fu Hsu and Ming-Chin Chang
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Bohr-Ran Huang: Institute of Electronics and Information Engineering, National YunLin University of Science and Technology, 123 University Road, Section 3, TouLiu, Yunlin, 640 Taiwan, R.O.C.
Kian Ping Loh: Institute of Electronics and Information Engineering, National YunLin University of Science and Technology, 123 University Road, Section 3, TouLiu, Yunlin, 640 Taiwan, R.O.C.;
Jung-Fu Hsu: Institute of Electronics and Information Engineering, National YunLin University of Science and Technology, 123 University Road, Section 3, TouLiu, Yunlin, 640 Taiwan, R.O.C.
Ming-Chin Chang: Institute of Electronics and Information Engineering, National YunLin University of Science and Technology, 123 University Road, Section 3, TouLiu, Yunlin, 640 Taiwan, R.O.C.

Surface Review and Letters (SRL), 2001, vol. 08, issue 05, 477-482

Abstract: The surface characteristics and depth profile of free-standing polycrystalline diamond films chemically etched from silicon substrates have been studied using monochromatic X-ray photoelectron spectroscopy and Auger electron spectroscopy. Two different processes for isolating the diamond films from the silicon substrates have been performed. The isolated/annealed-diamond film was prepared by rapid thermal processing (RTP) of the diamond-on-silicon film at a temperature of 800°C before chemically etching the diamond film from the silicon substrate. The annealed/isolated film was prepared by first chemically etching the diamond film from the silicon substrate, and then subjecting the stand-alone film to RTP. The qualities of the film on the top faces were improved for both the isolated/annealed-diamond and annealed/isolated-diamond films as verified by Raman spectroscopy. XPS analysis revealed different oxidation characteristics on the top and bottom faces of the isolated/annealed-diamond and annealed/isolated-diamond films. Silicon was detected on the bottom surfaces. A higher silicon and oxygen intensity was observed on the isolated/annealed diamond films compared to the annealed/isolated films. This can be due to the facilitated thermal diffusion of silicon into the grain boundaries during the initial RTP step in the preparation of the isolated/annealed-diamond film.

Date: 2001
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DOI: 10.1142/S0218625X01001373

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