FORMATION MECHANISM AND CRYSTALLOGRAPHIC RELATIONSHIP OF EPITAXYTiandAlTHIN FILMS IN IONIZED METAL PLASMA DEPOSITION

S. Li (), Y. K. Lee, C. Q. Sun and M. H. Liang
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S. Li: School of Materials Engineering, Nanyang Technological University, Singapore
Y. K. Lee: School of Materials Engineering, Nanyang Technological University, Singapore
C. Q. Sun: School of Materials Engineering, Nanyang Technological University, Singapore
M. H. Liang: School of Materials Engineering, Nanyang Technological University, Singapore

Surface Review and Letters (SRL), 2001, vol. 08, issue 05, 465-469

Abstract: Tithin film is widely used as a diffusion barrier to impede theAl/Cumigrating to theSisubstrate in the applications requiring high temperature processes such as high temperature sputtering and reflow developed for via-filling. To improve the bottom coverage without losing the excellent diffusion blockage and other electronic properties, the ionized metal plasma (IMP) deposition technique has been developed. This method has better control of the angular distribution on the substrate, and thus has been used to depositTias diffusion barriers for the subquarter micron device applications. However, the formation mechanism of the epitaxyTithin film deposited by ionic metal plasma deposition is not clear. In this work, the epitaxyTithin film has been characterized by the transmission electron microscope. The mechanism of the epitaxyTithin film formation and also the crystallographic relationship between theTiandAlthin films in the IMP deposition have been analyzed in detail. The results show that the lattice image of the Ti layer in the sample as deposited has a square-block-like structure with thecaxis perpendicular to the interfaces. This structure has anisotropic diffusion properties that can retard the diffusion ofAlacross theTilayer in the initial stage of the high temperatureAlsputtering or reflow processes.

Date: 2001
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DOI: 10.1142/S0218625X01001385

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