THIN FILMS OF SILICON NANOPARTICLES EMBEDDED INAl2O3MATRICES

Y. Zhu and P. P. Ong ()
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Y. Zhu: Department of Physics, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore
P. P. Ong: Department of Physics, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore

Surface Review and Letters (SRL), 2001, vol. 08, issue 05, 559-564

Abstract: Silicon nanoparticles embedded in a host matrix ofAl2O3thin film about 260 nm thick were prepared by using the pulsed laser deposition method. The laser target consisted of a small silicon wafer glued onto the surface of a circularAl2O3plate, which was set to rotate uniformly when laser-ablating. TEM and EDS results showed that the films consisted of silicon nanoparticles in the form of nanocrystals with diameters of less than 6 nm dispersed in the amorphousAl2O3matrices. Strong PL from the as-prepared and the annealed samples was observed. The SIMS depth profile of the silicon content of the film indicated that the silicon nanoparticles in theAl2O3matrices were arranged in fairly well demarcated thin layers sandwiched between layers of the host material. FTIR results evidently suggested that the encapsulating amorphousAl2O3material forms a good host for the prevention of atmospheric oxidation of the silicon nanoparticles. However, prolonged annealing can cause the silicon nanoparticle surface interfacing the host material to be oxidized by the oxygen mostly from theAl2O3molecules and be bonded to theAlorO–Albonds.

Date: 2001
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DOI: 10.1142/S0218625X01001440

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