SIMS STUDY OF SILICON OXYNITRIDE RAPID THERMALLY GROWN IN NITRIC OXIDE

R. Liu (), K. H. Koa, A. T. S. Wee, W. H. Lai, M. F. Li, A. See and L. Chan
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R. Liu: Department of Physics, National University of Singapore, Singapore
K. H. Koa: Department of Physics, National University of Singapore, Singapore
A. T. S. Wee: Department of Physics, National University of Singapore, Singapore
W. H. Lai: Department of Electrical Engineering, National University of Singapore, Singapore
M. F. Li: Department of Electrical Engineering, National University of Singapore, Singapore
A. See: R & D Department, Chartered Semiconductor Manufacturing, Singapore
L. Chan: R & D Department, Chartered Semiconductor Manufacturing, Singapore

Surface Review and Letters (SRL), 2001, vol. 08, issue 05, 569-573

Abstract: As the gate dielectric for ULSI MOS devices scales in the ultrathin regime, it is fabricated increasingly with silicon oxynitride instead of silicon dioxide films. One way to obtain silicon oxynitride films is the rapid thermal oxidation of silicon in NO (RTNO). Earlier RTNO growth studies were not sufficiently comprehensive as well as limited by temperature uncertainty and nonuniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, RTNO growth characteristics at oxidation pressures of 100 and 760 Torr, oxidation temperatures from 900 to 1200°C and oxidation times from 0 to 480 s were obtained and investigated. Anomalies in the growth characteristics were observed. It was also demonstrated that secondary ion mass spectrometry (SIMS) using theMCs+method could be used to accurately determine the depth distribution of N in ultrathin silicon oxynitride films.

Date: 2001
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DOI: 10.1142/S0218625X01001452

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