DEPENDENCE OF THERMAL OXIDATION BEHAVIOR OF SILICON NANOCRYSTALLITES

Y. Zhu and P. P. Ong ()
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Y. Zhu: Department of Physics, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore
P. P. Ong: Department of Physics, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore

Surface Review and Letters (SRL), 2001, vol. 08, issue 05, 565-568

Abstract: Three kinds of nanosilicon crystallites were prepared by different methods in high vacuum. All of them were composed of tiny silicon crystallites which were initially only mildly oxidized before annealing, but their behavior upon annealing in vacuum differed substantially depending on the environment in which they resided. XPS analyses revealed that the unencapsulated nanoparticles tended to oxidize quite quickly, whereas the nanoparticles sandwiched between layers ofAl2O3matrices were oxidized rather slowly even under intense annealing. In the zinc/silicon nanocrystalline mixture, the oxidation of theSi0state was even faster than that of the intermediateSi+1,+2,+3states. Both the stability and formation processes of theSi-Obonds in the partially oxidized states differed considerably with different environmental surroundings. However, in all cases, theSi-Obonds of the fully oxidizedSi+4state remained the most stable, to which the less oxidized states tend to gravitate eventually.

Date: 2001
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DOI: 10.1142/S0218625X0100149X

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