THE ADSORPTION AND DESORPTION PROCESSES ACCOMPANYING THE CHEMICAL VAPOUR DEPOSITION OF SILANE ON Cu(111) AND Ni(111)

I. G. Shuttleworth () and W. Allison
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I. G. Shuttleworth: Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
W. Allison: Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK

Surface Review and Letters (SRL), 2001, vol. 08, issue 06, 613-620

Abstract: The adsorption and desorption processes accompanying the deposition of silane on Cu(111) and Ni(111) have been investigated using work function change (Δϕ), Auger electron spectroscopy (AES) and thermal desorption spectroscopy (TDS). In the early stages of deposition (0–2 L), at 130 K, on the Cu(111) surface, a predominantly hydrogenic phase forms. Heating the saturated surface toTs>400K produces a two-phase system:Cu2Sialloy and clean Cu(111). The regenerated Cu(111) phase extends across(16 ± 1)%of the total surface area and this process of clean surface generation can be repeated by redosing onto the mixed phase surface. The temperature coefficient of the work function of theCu2Sialloy surface is-(7 ± 2) × 10-5eV/K. Dosing silane onto the 110 K Ni(111) surface to saturation deposits a relatively small amount (0.05 ML) of Si. However, theΔϕand TDS spectra are significantly distorted from their pure H/Ni(111) counterparts.

Date: 2001
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DOI: 10.1142/S0218625X01001567

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