EFFECT OF TEMPERATURE ONNH3REACTIVITY WITHSi(100)2×1

M. A. Zaïbi (), C. A. Sébenne and J. P. Lacharme
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M. A. Zaïbi: Laboratoire de Minéralogie-Cristallographie, UMR 7590 CNRS, Université, Pierre et Marie Curie, 4 Place Jussieu, 75252 Paris cedex 05, France
C. A. Sébenne: Laboratoire de Minéralogie-Cristallographie, UMR 7590 CNRS, Université, Pierre et Marie Curie, 4 Place Jussieu, 75252 Paris cedex 05, France
J. P. Lacharme: Laboratoire de Minéralogie-Cristallographie, UMR 7590 CNRS, Université, Pierre et Marie Curie, 4 Place Jussieu, 75252 Paris cedex 05, France

Surface Review and Letters (SRL), 2001, vol. 08, issue 06, 621-626

Abstract: Initially clean, (2 × 1)-reconstructed Si(100) surfaces were exposed toNH3, until saturation, at sequentially increased temperatures of up to 600°C. The resulting surfaces have been studied by low energy electron diffraction (LEED) and by photoemission yield and Auger electron spectrometries (PYS and AES). The room temperature saturation — for whichNH3is adsorbed in a dissociated form asNH2and H, either of them bonded to a single Si dimer — remains essentially unchanged up to 250°C. Beyond 250°C, NH radicals form and replace the Si dimers by flat Si–NH–Si bridges along the surface, which ends up being stabilized by a full monolayer of such bridges at 400–450°C. Beyond that starts the actual nitridation process which concerns deeper Si layers.

Keywords: 79.60.Dp–68.45.Da–68.35.Dv (search for similar items in EconPapers)
Date: 2001
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DOI: 10.1142/S0218625X01001579

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