AFM STUDIES OF VARIOUS NIOBIUM AND ALUMINIUM THIN FILMS FOR THEIR USE IN JOSEPHSON JUNCTIONS

Shahzad Naseem ()
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Shahzad Naseem: Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK

Surface Review and Letters (SRL), 2001, vol. 08, issue 06, 689-692

Abstract: Nb thin films have been prepared with e-beam evaporation under UHV conditions, and by RF magnetron sputtering. Al thin films were deposited by resistive heating in the UHV chamber. The preparation of these films and the trilayers ofNb/AlOx/Nbare intended for their use in Josephson junctions. Surface studies of these films are undertaken by using an atomic force microscope in the noncontact mode. These studies have revealed that the sputter-deposited Nb film surface is smoother than that of the UHV e-beam evaporated withRrmsvalues of 3.5 and 4.0 nm respectively. Al thin films have a very smooth surface, with anRrmsvalue of only 0.9 nm. Consequently, UHV-evaporated Nb thin films deposited on top of Al thin films are smoother, with a surface roughness of 1.8 nm.

Date: 2001
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DOI: 10.1142/S0218625X01001646

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