THICKNESS DEPENDENCE OF PHOTOEMISSION SPECTRA IN ZINC-BLENDE CrAs

M. Mizuguchi (), K. Ono, M. Oshima, J. Okabayashi, H. Akinaga, T. Manago and M. Shirai
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M. Mizuguchi: Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
K. Ono: Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
M. Oshima: Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
J. Okabayashi: Graduate School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
H. Akinaga: Joint Research Center for Atom Technology (JRCAT)/ National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
T. Manago: Joint Research Center for Atom Technology (JRCAT)/ Angstrom Technology Partnership (ATP), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-0046, Japan
M. Shirai: Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 01, 331-334

Abstract: The electronic structure of CrAs thin films with nominal thicknesses of 2 nm and 30 nm were studied by angle-resolved photoemission spectroscopy using synchrotron radiation. The CrAs film of 2 nm is expected to form a zinc-blende phase which is predicted to have a half-metallic band structure by theoretical calculation. On the other hand, it is considered that the CrAs film of 30 nm is a polycrystalline compound judging from reflection high-energy electron diffraction patterns. Different valence-band photoemission spectra were obtained for the two films. The photoemission spectra of the CrAs film of 30 nm showed no band dispersion, whereas a band dispersion was observed in that of the CrAs film with the nominal thickness of 2 nm.

Date: 2002
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DOI: 10.1142/S0218625X02002142

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