PHOTOEMISSION MICROSCOPY INVESTIGATION OF BURIEDp–nGaAsHOMOJUNCTIONS AND Al/n-GaAsSCHOTTKY BARRIERS

F. Barbo, M. Bertolo, A. Bianco, G. Cautero, S. Fontana, T. K. Johal, S. La Rosa, R. C. Purandare, N. Svetchnikov, A. Franciosi, D. Orani, M. Piccin, S. Rubini and R. Cimino
Additional contact information
F. Barbo: Sincrotrone Trieste, S.S.14 Km 163.5, Area Science Park, I-34012 Basovizza, Trieste, Italy
M. Bertolo: Sincrotrone Trieste, S.S.14 Km 163.5, Area Science Park, I-34012 Basovizza, Trieste, Italy
A. Bianco: Sincrotrone Trieste, S.S.14 Km 163.5, Area Science Park, I-34012 Basovizza, Trieste, Italy
G. Cautero: Sincrotrone Trieste, S.S.14 Km 163.5, Area Science Park, I-34012 Basovizza, Trieste, Italy
S. Fontana: Sincrotrone Trieste, S.S.14 Km 163.5, Area Science Park, I-34012 Basovizza, Trieste, Italy
T. K. Johal: Sincrotrone Trieste, S.S.14 Km 163.5, Area Science Park, I-34012 Basovizza, Trieste, Italy
S. La Rosa: Sincrotrone Trieste, S.S.14 Km 163.5, Area Science Park, I-34012 Basovizza, Trieste, Italy
R. C. Purandare: Sincrotrone Trieste, S.S.14 Km 163.5, Area Science Park, I-34012 Basovizza, Trieste, Italy
N. Svetchnikov: Sincrotrone Trieste, S.S.14 Km 163.5, Area Science Park, I-34012 Basovizza, Trieste, Italy
A. Franciosi: Laboratorio Nazionale TASC-INFM, Area Science Park, I-34012 Trieste, Italy
D. Orani: Laboratorio Nazionale TASC-INFM, Area Science Park, I-34012 Trieste, Italy
M. Piccin: Laboratorio Nazionale TASC-INFM, Area Science Park, I-34012 Trieste, Italy
S. Rubini: Laboratorio Nazionale TASC-INFM, Area Science Park, I-34012 Trieste, Italy
R. Cimino: INFN – Laboratori Nazionali di Frascati, PO Box 13, I-00044 Frascati, Italy

Surface Review and Letters (SRL), 2002, vol. 09, issue 01, 249-254

Abstract: A natural application of the emerging technique of photoemission microscopy to the study of semiconductor interfaces involves measuring a device in cross section to directly determine heterojunction parameters. We present here results on p–n GaAs homojunctions, which served as a prototype system to demonstrate the applicability of this technique to buried semiconductor interfaces. We also describe preliminary measurements of the electrostatic potential profile across Al/GaAs Schottky junctions.

Date: 2002
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DOI: 10.1142/S0218625X02002154

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