THE EFFECTS OF ANNEALING OF Ap-TYPE PHOTOLUMINESCENT POROUS SILICON IN VACUUM

H. J. Shin, M. K Lee, C. C. Hwang, K. J. Kim, T.-H. Kang, B. Kim, G. B. Kim, C. K. Hong, K. W. Lee and Y. Y. Kim
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H. J. Shin: Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea;
M. K Lee: Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
C. C. Hwang: Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
K. J. Kim: Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
T.-H. Kang: Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea
B. Kim: Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea;
G. B. Kim: Physics Department, POSTECH, Pohang, 790-784, Korea
C. K. Hong: Physics Department, POSTECH, Pohang, 790-784, Korea
K. W. Lee: Physics Department, Kongju National University, Kongju, Chungnam, 314-701, Korea
Y. Y. Kim: Physics Department, Kongju National University, Kongju, Chungnam, 314-701, Korea

Surface Review and Letters (SRL), 2002, vol. 09, issue 01, 261-265

Abstract: The changes of the structure and chemical states of photoluminescent p-type porous silicon (PS) caused by annealing in vacuum were investigated with atomic force microscopy and X-ray photoemission spectroscopy. The relative intensities of the silicon dioxide and suboxide peaks increased with the annealing temperature. The average size of the fine crystallites of the as-prepared samples was 5–10 nm and became 50–100 nm after being annealed at 550°C. The cause of photoluminescence quenching upon annealing is discussed.

Date: 2002
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DOI: 10.1142/S0218625X02002166

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