CuCONTAMINANT REMOVAL USINGUV/O3AND REMOTE HYDROGEN PLASMA

Kyunsuk Choi, Kwang Pyo Hong and Chongmu Lee ()
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Kyunsuk Choi: Department of Materials Science and Engineering, Inha University, Inchon 402-751, South Korea
Kwang Pyo Hong: Department of Materials Science and Engineering, Inha University, Inchon 402-751, South Korea
Chongmu Lee: Department of Materials Science and Engineering, Inha University, Inchon 402-751, South Korea

Surface Review and Letters (SRL), 2002, vol. 09, issue 01, 255-259

Abstract: Removal of Cu contaminants from Si wafer was carried out using remote hydrogen plasma (RHP) andUV/O3cleaning techniques. The concentration of Cu impurities on the wafer surface was monitored by TXRF (total reflection X-ray fluorescence) and XPS (X-ray photoelectron spectroscopy). Our results show that Cu impurities can be effectively removed by hydrogen plasma andUV/O3cleaning techniques, if it is performed under optimum process conditions. The optimum process parameters for the remote hydrogen plasma cleaning are the rf power of 20 W and the exposure time of 5 min. The optimum exposure time of theUV/O3cleaning for Cu impurity removal is 1 min. A two-step cleaning process composed of remote hydrogen plasma cleaning first andUV/O3cleaning next has been found to be more effective than a singleUV/O3cleaning process, a single remote hydrogen plasma cleaning process, or a two-step cleaning process composed ofUV/O3cleaning first and remote hydrogen plasma cleaning next. Cleaning efficiency is maximized at optimum process conditions where Cu contaminant removal effect and recontamination effect are traded off. Increasing the process parameters higher than the optimum values would decrease the cleaning efficiency.

Date: 2002
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DOI: 10.1142/S0218625X02002282

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