X-RAY ABSORPTION NEAR EDGE STRUCTURE INVESTIGATIONS OF GROUP III NITRIDES AND NITRIDED AIII-BV SEMICONDUCTOR SURFACES — FEFF CALCULATIONS AND ELECTRON YIELD MEASUREMENTS

T. Chassé (), K. H. Hallmeier, J.-D. Hecht and F. Frost
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T. Chassé: Institut für Oberflächenmodifizierung, Permoser Str. 15, D-04318 Leipzig, Germany;
K. H. Hallmeier: Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Germany
J.-D. Hecht: Institut für Oberflächenmodifizierung, Permoser Str. 15, D-04318 Leipzig, Germany
F. Frost: Institut für Oberflächenmodifizierung, Permoser Str. 15, D-04318 Leipzig, Germany

Surface Review and Letters (SRL), 2002, vol. 09, issue 01, 381-385

Abstract: Multiple scattering calculations using the FEFF-8 code were applied to simulate the X-ray absorption spectra recorded at the nitrogen K edge of III-N compounds. The major features of experimental N K XANES, including polarization effects, are well reproduced by the calculations, as is demonstrated for GaN. Further, FEFF calculations have been performed to investigate N bombardment-induced defects in III-V semiconductor surface layers. Recently reported nitrogen ion bombardment-induced spectral features of the N K absorption edge may be related to implanted nitrogen molecules by comparing experimental and calculated N K XANES.

Date: 2002
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DOI: 10.1142/S0218625X0200235X

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