THE EFFECT OF A LiF LAYER ONAl/LiF/Alq3INTERFACES STUDIED WITH ELECTRON SPECTROSCOPIES

Takahiro Yokoyama, Hisao Ishii, Yukio Ouchi, Daisuke Yoshimura, Kazuhiko Seki, Eisuke Ito and Hiroshi Oji
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Takahiro Yokoyama: Department of Chemistry, Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Hisao Ishii: Department of Chemistry, Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Yukio Ouchi: Department of Chemistry, Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Daisuke Yoshimura: Research Center for Materials Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Kazuhiko Seki: Research Center for Materials Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
Eisuke Ito: The Institute of Physical and Chemical Research, Hirosawa, Wako 351-0198, Japan
Hiroshi Oji: Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 01, 425-430

Abstract: The interface of the tris (8-hydroxyquinoline) aluminum (Alq3)/LiF/Alsystem was investigated with ultraviolet photoelectron spectroscopy (UPS), metastable atom electron spectroscopy (MAES), and X-ray photoelectron spectroscopy (XPS). Strong chemical interaction was observed atAlq3on Al interface. By inserting a LiF layer, this interaction is suppressed and interface energy level alignment is changed to reduce a barrier for electron injection. The enhancement of device efficiency is ascribed to these phenomena. The importance of the combined use of various techniques on the same interface is stressed.

Date: 2002
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DOI: 10.1142/S0218625X02002415

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