VUV PHOTOELECTRON DYNAMICS IN PURE CESIUM HALIDE AND IMPURITY (TlAND Na) DOPED CsI; ABSOLUTE PHOTOEMISSION TOTAL YIELD, AUGER FREE LUMINESCENCE, AND STE LUMINESCENCE

Arisato Ejiri and Shinzou Kubota
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Arisato Ejiri: School of Science and Technology, Meiji University, Higasi-Sanda, Tama, Kawasaki 214, Japan
Shinzou Kubota: Department of Physics, Faculty of Science, Rikkyo University, Tosimaku, Tokyo 171, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 01, 447-454

Abstract: Absolute photoemission total yield (APTY) spectra and VUV-excited luminescence in cesium halides of CsCl, CsBr, and CsI, as well as in Tl-doped and Na-doped cesium iodide, were studied at several temperatures from 400 K to 80 K in the VUV region (5–30 eV). Although it is common that the intensities of APTY exceed unity in the photon energy region excitingCs+5pcore electron in all of these halides at room temperature, this is most in the cesium iodides and most less in CsCl. These phenomena are explained in terms of Auger enhancement due to the Auger effect associated with the decay process of theCs+5pcore hole. From the detailed analysis of temperature dependence of APTY and of Auger free luminescence (AFL) in CsCl and CsBr, a strong complementary relation between APTY and AFL was revealed, and the temperature-dependent energy level diagram of CsBr including the valence band and theCs+5pcore level was proposed. While in these CsI, APTY indicate as large as 1.5 or more at the high temperature and the decrease of APTY for decreasing temperature can be commonly explained in terms of the complementary relation with photoluminescence.

Date: 2002
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DOI: 10.1142/S0218625X02002440

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