THE TRANSITION FROM AMORPHOUS SILICON OXIDE TO CRYSTALLINE SILICON STUDIED BY PHOTOELECTRON DIFFRACTION

C. Westphal, S. Dreiner, M. Schürmann and H. Zacharias
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C. Westphal: Universität Dortmund, Experimentelle Physik I, Otto-Hahn-Str. 4, D-44221 Dortmund, Germany;
S. Dreiner: 2 Westfälische Wilhelms-Universität Münster, Physikalisches Institut, Wilhelm-Klemm-Str. 10, D-48149 Münster, Germany
M. Schürmann: 2 Westfälische Wilhelms-Universität Münster, Physikalisches Institut, Wilhelm-Klemm-Str. 10, D-48149 Münster, Germany
H. Zacharias: 2 Westfälische Wilhelms-Universität Münster, Physikalisches Institut, Wilhelm-Klemm-Str. 10, D-48149 Münster, Germany

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 735-740

Abstract: Angle-scanned photoelectron diffraction patterns of the Si 2p signal of oxidized Si(111) and Si(001) surfaces have been recorded and compared with simulations. The chemically shifted components of the Si 2p signal were deconvoluted by least squares fitting. The different oxidation states exhibit individual diffraction patterns for both surface orientations, indicating a different environment for each suboxide. For the Si(111) surface the results agree with a previously proposed sharp interface, whereas a graded interface is indicated for the Si(001) surface.

Date: 2002
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DOI: 10.1142/S0218625X02002725

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