TEMPERATURE EVOLUTION OF THE PHOTOEMISSION SPECTRA FOR THE Si(111) SURFACE USING THE LASER ANNEALING METHOD

Yuichi Haruyama, Shinji Matsui, Taichi Okuda, Ayumi Harasawa, Toyohiko Kinoshita, Shin-Ichiro Tanaka, Hideo Makino and Katsuo Wada
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Yuichi Haruyama: Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, 3-1-2 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1205, Japan
Shinji Matsui: Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, 3-1-2 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1205, Japan
Taichi Okuda: Synchrotron Radiation Laboratory, Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa-shi, Chiba 277-8581, Japan
Ayumi Harasawa: Synchrotron Radiation Laboratory, Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa-shi, Chiba 277-8581, Japan
Toyohiko Kinoshita: Synchrotron Radiation Laboratory, Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa-shi, Chiba 277-8581, Japan
Shin-Ichiro Tanaka: Faculty of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 464-8602, Japan
Hideo Makino: Silicon Technology LTD, 897-20 Kyowa, Mochizuki, Kitasaku-gun, Nagano 384-2204, Japan
Katsuo Wada: Silicon Technology LTD, 897-20 Kyowa, Mochizuki, Kitasaku-gun, Nagano 384-2204, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 769-774

Abstract: We have studied the electronic structures in a wide temperature range for the Si(111) surface using photoemission spectroscopy combined with the laser annealing method. The temperature dependence of the Si2psurface-sensitive core level photoemission spectra shows some gradual changes along with the thermal broadening above ~1063 K. In addition, the spectral change in the valence band photoemission spectra was also observed across the7 × 7–1 × 1transition temperature. These results indicate that the surface band structure is changed along with structural change at the7 × 7–1 × 1transition temperature. With increase of the temperature, the shift of the Si2pcore-level photoemission spectra to the lower binding energy side was observed. We discuss the temperature-induced effects such as the thermal broadening and the observed shift.

Date: 2002
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DOI: 10.1142/S0218625X02002737

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