BURIED INTERFACES OF HEAT-LOADED Mo/SiMULTILAYERS STUDIED BY SOFT-X-RAY EMISSION SPECTROSCOPY

N. Miyata, T. Imazono, S. Ishikawa, A. Arai, M. Yanagihara and M. Watanabe
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N. Miyata: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
T. Imazono: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
S. Ishikawa: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
A. Arai: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
M. Yanagihara: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
M. Watanabe: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 663-667

Abstract: We measured SiL2,3soft-X-ray emission spectra from Mo/Si multilayers annealed at 400°C. We showed thatMoSi2was formed at the interface, and the thickness of theMoSi2interlayer increased with the annealing time. By an analysis of the soft-X-ray emission spectra and the patterns of small-angle X-ray diffraction, we estimated the thickness of theMoSi2interlayer and a diffusion coefficient between Mo and Si at 400°C as1.1 (± 0.2) × 10-18cm2/s. We showed that soft-X-ray emission spectroscopy is a useful tool for studying the thermal change of the buried interface nondestructively.

Date: 2002
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DOI: 10.1142/S0218625X0200283X

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