TEMPERATURE AND TIME DEPENDENCE OF EMISSION PROPERTIES OF ZnO FILMS DEPOSITED ON SiSUBSTRATES

G. B. Zhang, H. J. Zhou, C. S. Shi, J. Y. Shi, Y. X. Zhou, X. Y. Zhang, Z. X. Fu, M. Kirm and G. Zimmerer
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G. B. Zhang: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
H. J. Zhou: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
C. S. Shi: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
J. Y. Shi: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
Y. X. Zhou: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
X. Y. Zhang: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China
Z. X. Fu: Department of Physics, University of Science and Technology of China, Hefei 230026, P. R. China
M. Kirm: II. Institut für Experimental Physik der Universität Hamburg, Germany
G. Zimmerer: II. Institut für Experimental Physik der Universität Hamburg, Germany

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 699-703

Abstract: The emission properties of ZnO films deposited on Si substrates by reactive dc sputtering have been studied using synchrotron radiation (SR). The integrated luminescence spectra as well as the spectra at a fast time window from about 4 ns to 8 ns and a slow time window from about 20 ns to 160 ns were measured simultaneously, at a temperature range from several K to 300 K. Apart from the bound-exciton radiation recombination (peaked at 369.5 nm) and ultraviolet emission band (peaked at 380 nm), a new emission band peaked at 290 nm was found for the first time under SR vacuum ultraviolet excitation. The mechanisms of these photoluminescence emissions are discussed.

Date: 2002
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DOI: 10.1142/S0218625X02002865

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