ELECTRONIC STRUCTURE OF AgTHIN FILMS ON A Ge(001) SURFACE

K. Nakatsuji (), M. Yamada, S. Ohno, Y. Naitoh, T. Iimori, T. Okuda, A. Harasawa, T. Kinoshita and F. Komori
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K. Nakatsuji: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
M. Yamada: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
S. Ohno: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
Y. Naitoh: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
T. Iimori: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
T. Okuda: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
A. Harasawa: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
T. Kinoshita: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
F. Komori: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 681-686

Abstract: We have studied the electronic structure of Ag thin films of monoatomic height grown on a Ge(001) surface at 95 K by using photoelectron spectroscopy. All the surface states on the clean Ge surface vanished and Ag5sderived state appeared in the bulk band gap just below the Fermi level. These suggest a strong interaction with the substrate. On the other hand, on three-dimensional (3D) islands formed on a room temperature substrate, small changes were found in Ge3dspectrum from the clean surface. Each of the Ag 3D islands already had bulklike feature in the valence band structure. The results are consistent with recent observation by scanning tunneling microscopy.

Date: 2002
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DOI: 10.1142/S0218625X02002890

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