CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER SiADSORPTION

L. I. Johansson, C. Virojanadara and T. Balasubramanian
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L. I. Johansson: Department of Physics, Linköping University, S 58183 Linköping, Sweden
C. Virojanadara: Department of Physics, Linköping University, S 58183 Linköping, Sweden
T. Balasubramanian: Max-laboratory, Lund University, S 22100 Lund, Sweden

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 687-691

Abstract: A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At$\underline{\Gamma}$the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around0.5 Å-1along both the$\underline{\Gamma} \hbox{-}\underbar{\rm K}$and$\underline{\Gamma} \hbox{-}\underbar{\rm M}$directions. At$\underbar{\rm M}$and beyond$\underbar{\rm K}$only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

Date: 2002
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DOI: 10.1142/S0218625X02002907

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