USXES AND OPTICAL PHENOMENA IN SiLOW-DIMENSIONAL STRUCTURES DEPENDENT ON MORPHOLOGY AND SILICON OXIDE COMPOSITION ON SiSURFACE

T. V. Torchynska (), M. Morales Rodriguez, G. P. Polupan, L. I. Khomenkova, N. E. Korsunskaya, V. P. Papusha, L. V. Scherbina, E. P. Domashevskaya, V. A. Terekhov and S. Yu. Turischev
Additional contact information
T. V. Torchynska: National Polytechnic Institute, UPALM, 07738, Mexico DF, Mexico
M. Morales Rodriguez: National Polytechnic Institute, UPALM, 07738, Mexico DF, Mexico
G. P. Polupan: National Polytechnic Institute, UPALM, 07738, Mexico DF, Mexico
L. I. Khomenkova: Institute of Semiconductor Physics, National Academy of Sciences, Kiev-28, Ukraine
N. E. Korsunskaya: Institute of Semiconductor Physics, National Academy of Sciences, Kiev-28, Ukraine
V. P. Papusha: Institute of Semiconductor Physics, National Academy of Sciences, Kiev-28, Ukraine
L. V. Scherbina: Institute of Semiconductor Physics, National Academy of Sciences, Kiev-28, Ukraine
E. P. Domashevskaya: Solid State Physics Department, Voronezh State University, Voronezh, 394693, Russia
V. A. Terekhov: Solid State Physics Department, Voronezh State University, Voronezh, 394693, Russia
S. Yu. Turischev: Solid State Physics Department, Voronezh State University, Voronezh, 394693, Russia

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 1047-1052

Abstract: It has been shown that the intensive and broad "red" photoluminescence band in porous silicon is a nonelementary one and could be decomposed on at least three elementary bands. Photoluminescence, ultrasoft X-ray emission spectroscopy, infrared absorption and atomic force microscopy methods were used to study the reasons for both luminescence band appearance in porous silicon photoluminescence spectra, prepared in different technological conditions. The mechanisms of radiative transition for both elementary bands have been discussed as well.

Date: 2002
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DOI: 10.1142/S0218625X02003329

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