RESONANTLαX-RAY RAMAN SCATTERING SPECTRA OFCeF3,CeO2andCeB6

S. Nakai, T. Watanabe, K. Sasaki, T. Iwasaki, M. Odaka, T. Kashiwakura, T. Yamazaki and T. Iwazumi
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S. Nakai: Department of Electrical and Electronic Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
T. Watanabe: Department of Electrical and Electronic Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
K. Sasaki: Department of Electrical and Electronic Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
T. Iwasaki: Department of Electrical and Electronic Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
M. Odaka: Department of Electrical and Electronic Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
T. Kashiwakura: Department of Electrical and Electronic Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
T. Yamazaki: Department of Electrical and Electronic Engineering, Utsunomiya University, Utsunomiya 321-8585, Japan
T. Iwazumi: Photon Factory, Institute of Materials Structure Science, Tsukuba 305-0801, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 1059-1064

Abstract: ResonantLαemission spectra of Ce compounds,CeF3,CeO2andCeB6, were measured around theLIIIabsorption threshold. As the energy of the incident photon is tuned at the pre-edge region and at the absorption peaks of the CeLIIIabsorption spectrum, the Raman peaks are resonantly enhanced. Obtained spectra are decomposed into Raman and normalLαemission peaks by line shape analysis. The results show that the Raman spectra provide more detailed information than the absorption spectra about the4fconfiguration of Ce compounds.

Date: 2002
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DOI: 10.1142/S0218625X02003342

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