ELECTRONIC STRUCTURES OF THE METAL-TO-INSULATOR TRANSITION SYSTEM1T-TaSxSe2-xSTUDIED BY ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY

K. Horiba, K. Ono, M. Oshima, Y. Aiura and O. Shiino
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K. Horiba: Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
K. Ono: Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
M. Oshima: Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Y. Aiura: National Institute of Advanced Idustrial Science and Technology, 1-1-1 Umezono, Tsukuba-shi, Ibaraki 305-8568, Japan
O. Shiino: Data Storage Technology Center, TDK Corporation, 462-1 Odai, Saku-shi, Nagano 385-0009, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 1085-1089

Abstract: We have investigated the electronic structures of metal-to-insulator transitions (MIT) due to charge-density-wave phase transition in1T-TaSxSe2-xby angle-resolved photoemission spectroscopy. In the insulating phase of the sample withx = 1.5, we observe a gap formation at the Fermi energy(EF), while in the metallic phase of the sample withx = 1.2, we do not observe a drastic change in the spectra between at room temperature and at low temperature. We observe a peak originating from the lower Hubbard band in the insulating phase of the sample withx = 1.5. In the metallic phase of the sample withx = 1.2, the peak intensity is smaller and the peak energy shifts nearEF, but the lower Hubbard band peak still remains. These results suggest that MIT in1T-TaSxSe2-xis due to the Mott localization.

Date: 2002
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DOI: 10.1142/S0218625X0200338X

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