SURFACE-PHOTOVOLTAGE EFFECT IN A GaAs–GaAsP SUPERLATTICE STUDIED WITH COMBINATION OF SYNCHROTRON RADIATION AND THE LASER

Senku Tanaka, Sam D. Moré, Kazutoshi Takahashi, Masao Kamada, Tomohiro Nishitani and Tsutomu Nakanishi
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Senku Tanaka: School of Mathematical and Physical Science, The Graduate University for Advanced Studies, Okazaki, 444-8585, Japan
Sam D. Moré: UVSOR Facility, Institute for Molecular Science, Okazaki, 444-8585, Japan
Kazutoshi Takahashi: UVSOR Facility, Institute for Molecular Science, Okazaki, 444-8585, Japan
Masao Kamada: UVSOR Facility, Institute for Molecular Science, Okazaki, 444-8585, Japan
Tomohiro Nishitani: Department of Physics, Nagoya University, Nagoya, 464-8602, Japan
Tsutomu Nakanishi: Department of Physics, Nagoya University, Nagoya, 464-8602, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 1297-1301

Abstract: Core-level photoelectron spectroscopy with the combination of synchrotron radiation (SR) and a laser was used for exploring the surface-photovoltage (SPV) effect and its temporal profiles in a GaAs–GaAsP superlattice (SL). It was observed that the SPV value in the SL is suppressed as compared with a bulk GaAs. However, no significant difference was found in the temporal profile between the bulk and the SL. It is suggested that the suppression of the SPV in the SL is dominantly due to the small value of band bending under thermal equilibrium.

Date: 2002
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DOI: 10.1142/S0218625X02003573

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