THREE-DIMENSIONAL BAND MAPPING BY COMBINED VERY-LOW-ENERGY ELECTRON DIFFRACTION AND PHOTOEMISSION

V. N. Strocov, R. Claessen, H. I. Starnberg, P. O. Nilsson, G. Nicolay, S. Hüfner, P. Blaha, A. Kimura, A. Harasawa, S. Shin and A. Kakizaki
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V. N. Strocov: Experimentalphysik II, Universität Augsburg, D-86135 Augsbur, Germany;
R. Claessen: Experimentalphysik II, Universität Augsburg, D-86135 Augsbur, Germany
H. I. Starnberg: Department of Physics, Chalmers University of Technology and Göteborg University, SE-41296 Göteborg, Sweden
P. O. Nilsson: Department of Physics, Chalmers University of Technology and Göteborg University, SE-41296 Göteborg, Sweden
G. Nicolay: Fachrichtung Experimentalphysik, Universität des Saarlandes, D-66041 Saarbrücken, Germany
S. Hüfner: Fachrichtung Experimentalphysik, Universität des Saarlandes, D-66041 Saarbrücken, Germany
P. Blaha: Institute für Physikalische und Theoretische Chemie, Technische Universität Wien, A-1060 Wien, Austria
A. Kimura: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
A. Harasawa: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
S. Shin: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
A. Kakizaki: Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 1275-1280

Abstract: Resolving the 3D wave vectorkin photoemission mapping of the band structureE(k)requires knowledge of the unoccupied final states. Both dispersions and lifetimes of these states can be achieved by very-low-energy electron diffraction (VLEED). By incorporating the non-free-electron and excited-state effects in the final states, combining VLEED with photoemission provides accurate mapping of the valenceE(k)resolved in the 3D wave vector and under control of the intrinsic accuracy. We here concentrate on the most accurate combined method which uses angle-dependent VLEED and photoemission measurements. It provides access to many Brillouin-zone lines using one crystal surface, and benefits from an intensity gain and a better intrinsic accuracy near the Fermi level.

Date: 2002
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DOI: 10.1142/S0218625X0200369X

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