BULK BAND GAPS IN DIVALENT HEXABORIDES: A SOFT X-RAY EMISSION STUDY

J. D. Denlinger (), G.-H. Gweon, J. W. Allen, A. D. Bianchi and Z. Fisk
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J. D. Denlinger: Advanced Light Source, Lawrence Berkeley National Lab, Berkeley, CA 94720, USA
G.-H. Gweon: Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109-1120, USA
J. W. Allen: Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109-1120, USA
A. D. Bianchi: National High Magnetic Field Lab, Florida State University Tallahassee, FL 32306, USA
Z. Fisk: National High Magnetic Field Lab, Florida State University Tallahassee, FL 32306, USA

Surface Review and Letters (SRL), 2002, vol. 09, issue 02, 1309-1313

Abstract: Boron K-edge soft X-ray emission and absorption are used to address the fundamental question of whether divalent hexaborides are intrinsic semimetals or defect-doped band gap insulators. These bulk-sensitive measurements, complementary and consistent with surface-sensitive angle-resolved photoemission experiments, confirm the existence of a bulk band gap and the location of the chemical potential at the bottom of the conduction band.

Date: 2002
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DOI: 10.1142/S0218625X0200372X

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