DOUBLE ATOMIC LAYERS OF GRAPHENE/MONOLAYERh-BN ON Ni(111) STUDIED BY SCANNING TUNNELING MICROSCOPY AND SCANNING TUNNELING SPECTROSCOPY

Toyosei Kawasaki (), Takashi Ichimura, Hiroshi Kishimoto, Ade Asneil Akbar, Takashi Ogawa and Chuhei Oshima
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Toyosei Kawasaki: Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26, Nishi-waseda, Shinjuku, Tokyo 169-0051, Japan;
Takashi Ichimura: Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjnku-ku, Tokyo 169-8555, Japan
Hiroshi Kishimoto: Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjnku-ku, Tokyo 169-8555, Japan
Ade Asneil Akbar: Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjnku-ku, Tokyo 169-8555, Japan
Takashi Ogawa: Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjnku-ku, Tokyo 169-8555, Japan
Chuhei Oshima: Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26, Nishi-waseda, Shinjuku, Tokyo 169-0051, Japan;

Surface Review and Letters (SRL), 2002, vol. 09, issue 03n04, 1459-1464

Abstract: Using STM, we have directly confirmed the incommensurate stacking of double atomic layers of graphene and monolayerh-BN on Ni(111). The formation of a graphene layer weakens the interfacial interaction between monolayerh-BN and Ni(111), resulting in insulatingh-BN layers, while a pristine monolayerh-BN on Ni(111) is metallic. The STS spectra of the double atomic layers showed a tunneling character with a band gap of 0.5 eV.

Keywords: Graphene; h-BN; STM; STS; Ni(111) (search for similar items in EconPapers)
Date: 2002
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DOI: 10.1142/S0218625X02003883

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