CRITICAL EXPONENT MEASUREMENT OF POOR QUALITY DIAMOND FILMS

M. C. Salvadori (), L. L. Melo, D. R. Martins, A. R. Vaz and M. Cattani
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M. C. Salvadori: Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazil
L. L. Melo: Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazil
D. R. Martins: Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazil
A. R. Vaz: Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazil
M. Cattani: Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, SP, Brazil

Surface Review and Letters (SRL), 2002, vol. 09, issue 03n04, 1409-1412

Abstract: We have synthesized poor quality diamond films, using high methane concentretion, by plasma-assisted chemical vapor deposition on silicon substrates. The roughness and dynamic critical exponents, α and β, of these films have been measured using an atomic force microscope. We show that the morphology, the roughness and the critical exponents of the diamond films are significantly different from those obtained with a low methane concentration. Our results are compared with Kardar–Parisi–Zhang theoretical predictions.

Keywords: Diamond films; critical exponents (search for similar items in EconPapers)
Date: 2002
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DOI: 10.1142/S0218625X02004037

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