A STUDY OF THE ELECTRICAL PROPERTIES OFAl2O3FILMS DEPOSITED ON GaAsSUBSTRATES BY SPRAY PYROLYSIS

J. Chavez-Ramirez, M. Aguilar-Frutis, M. Garcia, E. Martinez, O. Alvarez-Fregoso (), S. Lopez, G. Burillo and C. Falcony
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J. Chavez-Ramirez: Facultad de Qumica, UNAM, Coyoacn 04510, Mexico DF, Mexico
M. Aguilar-Frutis: CICATA, IPN, Miguel Hidalgo 11500, Mexico DF, Mexico
M. Garcia: Instituto de Investigaciones en Materiales, UNAM, Coyoacn 04510, Mexico DF, Apdo. Postal 70-360, Mexico
E. Martinez: Instituto de Investigaciones en Materiales, UNAM, Coyoacn 04510, Mexico DF, Apdo. Postal 70-360, Mexico
O. Alvarez-Fregoso: Instituto de Investigaciones en Materiales, UNAM, Coyoacn 04510, Mexico DF, Apdo. Postal 70-360, Mexico
S. Lopez: Instituto de Investigaciones en Materiales, UNAM, Coyoacn 04510, Mexico DF, Apdo. Postal 70-360, Mexico
G. Burillo: ICN, UNAM, Coyoacn 04510, Mexico DF, Mexico
C. Falcony: Departamento de Fisica, CINVESTAV-IPN, Mexico DF, Mexico

Surface Review and Letters (SRL), 2002, vol. 09, issue 05n06, 1637-1640

Abstract: Electrical characteristics of high quality aluminum oxide thin films deposited by the spray pyrolysis technique on GaAs substrates are reported. The films were deposited using a spraying solution of aluminum acetylacetonate in N,N-dimethylformamide and an ultrasonic mist generator. The substrates were (100) GaAs wafers Si-doped(1018cm-3). The substrate temperature during deposition was in the range of 300–600°C. The electrical characteristics of these films were determined by capacitance and current versus voltage measurements by the incorporation of these films into metal-oxide-semiconductor structures. The interface state density resulted in the order of10121/eV-cm2and the films can stand electric fields higher than 5 MV/cm, without observing a destructive dielectric breakdown. The refractive index, measured by ellipsometry at 633 nm, resulted close to 1.64. The determination of the chemical composition of the films was achieved by energy dispersive X-ray spectroscopy; it resulted close to that of stoichiometric aluminum oxide (O/Al = 1.5) when films are deposited at substrate temperatures of 300–350°C.

Date: 2002
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DOI: 10.1142/S0218625X02004128

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