CHEMICAL AND STRUCTURAL CHARACTERIZATION OF Co–NiSILICIDE THIN FILMS

M. Garcia-Mendez, N. Elizondo-Villarreal, M. H. Farias (), G. A. Hirata and G. Beamson
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M. Garcia-Mendez: Facultad de Ciencias Fìsico-Matemáticas de la UANL. Manuel L. Barragán S/N, Edif. de Posgrado, Ciudad Universitaria, San Nicolás de los Garza, N.L. 66450, Mexico
N. Elizondo-Villarreal: Facultad de Ciencias Fìsico-Matemáticas de la UANL. Manuel L. Barragán S/N, Edif. de Posgrado, Ciudad Universitaria, San Nicolás de los Garza, N.L. 66450, Mexico
M. H. Farias: Centro de Ciencias de la Materia Condensada, UNAM, Apdo. Postal 2681, Ensenada, B.C. 22800, Mexico
G. A. Hirata: Centro de Ciencias de la Materia Condensada, UNAM, Apdo. Postal 2681, Ensenada, B.C. 22800, Mexico
G. Beamson: Daresbury Laboratory, Daresbury, Warrington, Cheshire WA4 4AD, UK

Surface Review and Letters (SRL), 2002, vol. 09, issue 05n06, 1661-1666

Abstract: By means of pulsed laser deposition we prepared Co–Ni/p-Si thin films upon a Si(100) substrates. Samples were thermally treated in vacuum in order to promote silicide formation. From X-ray photo-electron spectroscopy (XPS) analysis, we detected chemical shifts of the Co2p and Ni2p transitions, characteristic of silicide binding energy, at the respective ranges of 778.3–778.6 and 853.2–853.6 eV. By means of high resolution transmission electron microscopy (HRTEM) we identified some nanocrystalline regions belonging toCoSi2,Ni2SiandNiSi2structures. We also appreciate that the resulting films are of a polycrystalline nature.

Date: 2002
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DOI: 10.1142/S0218625X02004177

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