NEW PHYSICAL PRINCIPLES OF CONTACT THERMOELECTRIC COOLING

Yu. G. Gurevich, G. N. Logvinov, O. Yu. Titov and J. Giraldo ()
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Yu. G. Gurevich: Departamento de Física, CINVESTAV–IPN, Apdo. Postal 14-740, 07000 México, DF, Mexico
G. N. Logvinov: SEPI ESIME Culhuacan, Instituto Politecnico Nacional, Av. Santa Ana, 1000, Col. San Francisco, CD 04430, DF, Mexico
O. Yu. Titov: CICATA–IPN, Av. José Siurob 10, Col. Alameda, 76040 Querétaro, Qro., Mexico
J. Giraldo: Grupo de Física de la Materia Condensada, Universidad Nacional de Colombia, AA 60739, Bogotá, Colombia

Surface Review and Letters (SRL), 2002, vol. 09, issue 05n06, 1703-1708

Abstract: We suggest a new approach to theory of contact thermoelectric cooling (Peltier effect). The metal–metal, metal–n-type semiconductor, metal–p-type semiconductor,p–njunction contacts are analyzed. Both degenerate and nondegenerate electron and hole gases are considered. The role of recombination in the contact cooling effect is discussed for the first time.

Keywords: Thermoelectric cooling; Peltier effect; contact phenomena; generation and recombination; 72.20. Jv; 72.20. Pa; 73.40 Lq (search for similar items in EconPapers)
Date: 2002
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DOI: 10.1142/S0218625X02004256

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