AlGeALLOY COMPOSITION CALCULATED BY AUGER ELECTRON SPECTROSCOPY

M. P. Hernández (), J. L. Peña, C. F. Alonso (), P. Bartolo-Pérez and M. H. Farías
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M. P. Hernández: Centro de Investigacin en Ciencia Aplicada y Tecnología Avanzada del IPN, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600, Altamira, Tamps., Mexico
J. L. Peña: Centro de Investigacin en Ciencia Aplicada y Tecnología Avanzada del IPN, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600, Altamira, Tamps., Mexico
C. F. Alonso: Facultad de Física, Universidad de La Habana, San Lázaro y L, Plaza, 10400, Ciudad de La Habana, Cuba
P. Bartolo-Pérez: Departamento de Física Aplicada, Centro de Investigación y de Estudios Avanzados del IPN, Mérida, Apartado Postal 73 Cordemex, 97310, Mérida, Yuc., Mexico
M. H. Farías: Centro de Ciencias de la Materia Condensada de la, Universidad Nacional Autónoma de México, Apartado Postal 2681, Ensenada, BC, Mexico

Surface Review and Letters (SRL), 2002, vol. 09, issue 05n06, 1709-1713

Abstract: The Al and Ge molar fraction of a few surface atomic layers in AlGe binary alloys was calculated using Auger electron spectroscopy (AES) and the evaluation of the Auger electron matrix factor or the matrix correction. The electron backscattering correction factor(R)and the inelastic mean path (IMFP) were taken into account to calculate the matrix correction. The IMFP was obtained from experimental optical data and elastic peak electron spectroscopy (EPES) measurements. The electron backscattering correction factor was calculated using Monte Carlo simulations. The main sources of the uncertainty of the Al and Ge molar fraction of a few surface atomic layers in AlGe binary alloys is the uncertainty of Al IMFP.

Date: 2002
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DOI: 10.1142/S0218625X02004268

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