STUDY OFAl0.065Ga0.935SbAVALANCHE PHOTODETECTORS FOR1.55 μmOF WAVELENGTH BY LIQUID PHASE EPITAXY AT LOW TEMPERATURE

J. Martínez-Juárez (), J. Olvera (), T. Díaz (), F. de Anda and A. Escobosa
Additional contact information
J. Martínez-Juárez: Centro de Investigación en Dispositivos Semiconductores – ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla, Pue., CP 72000, Puebla, Mexico
J. Olvera: Centro de Investigación en Dispositivos Semiconductores – ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla, Pue., CP 72000, Puebla, Mexico
T. Díaz: Centro de Investigación en Dispositivos Semiconductores – ICUAP, Benemérita Universidad Autónoma de Puebla, Apartado Postal 1651, Puebla, Pue., CP 72000, Puebla, Mexico
F. de Anda: Instituto de Investigación en Comunicación Óptica – UASLP, SLP, Mexico
A. Escobosa: SEES, Ingeniería Eléctrica – CINVESTAV, DF, Mexico

Surface Review and Letters (SRL), 2002, vol. 09, issue 05n06, 1741-1745

Abstract: We report the results of a study ofAl0.065Ga0.935Sbavalanche photodetectors grown on n-GaSb substrates. The devices have been fabricated from layers with the structurep-Al0.13Ga0.87Sb/n-Al0.065Ga0.935Sb:Te/n-GaSb(substrate) grown by liquid phase epitaxy (LPE) with a composition matched to detect light of 1.55 μm. The heterostructures were grown from Ga-rich solutions at 400°C. Just after their growth, the structures were subjected to baking processes inside the growth chamber. The baking time was varied and its influence on the breakdown voltages of the junctions was observed. Breakdown voltages up to 12 V, very low net donor concentration in the active layer(1E15cm-3), and avalanche multiplication factors of around 50 have been obtained. The carrier concentration was determined by the C–V method. Photoluminescence and X-ray diffraction measurements were carried out to investigate the properties of the LPE-grown ternary layers, to determine the band gap and to estimate the quality of epitaxial layers. The photoresponses of the detectors are also presented.

Date: 2002
References: Add references at CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X02004323
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:09:y:2002:i:05n06:n:s0218625x02004323

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X02004323

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().