SPACE-CHARGE LAYERS AND SURFACE STATES INp-TYPE CRYSTALLINE SILICON

A. Ramírez-Porras (), A. Many, Y. Goldstein and S. Z. Weisz
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A. Ramírez-Porras: Centro de Investigación en Ciencia e Ingeniería de Materiales and Escuela de Física, Universidad de Costa Rica, San Pedro 2060, Costa Rica
A. Many: Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
Y. Goldstein: Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel
S. Z. Weisz: Departamento de Fisica, Universidad de Puerto Rico, Rio Piedras, Puerto Rico 00931, USA

Surface Review and Letters (SRL), 2002, vol. 09, issue 05n06, 1773-1777

Abstract: Pulse measurements on the silicon/electrolyte interface have been used to study space-charge layers and surface states on the (100) faces of p-type silicon. The techniques used enable both the creation and study of space-charge layers at the semiconductor surface, ranging from large-depletion to strong-accumulation conditions. They also permit a straightforward separation of the different components of the induced charge at the silicon/electrolyte interface, so as to yield the variation of both the free-electron density in the space-charge layer and the density of occupied surface states with barrier height. The measured space-charge characteristics are in very good agreement with theory. The data in strong-accumulation layers indicate the presence of an insulating buffer layer (such as an oxide), 3–4 monolayers thick. As to surface states, we find that for CP-4-etched silicon, a distribution of states exists ~ 0.34 eV above the valence-band edge, with total density~ 6 × 1011cm-2.

Date: 2002
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DOI: 10.1142/S0218625X02004396

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