THERMAL DECOMPOSITION AND DESORPTION OF DIETHYLAMIDO OF TETRAKIS(DIETHYLAMIDO)ZIRCONIUM (TDEAZr) ON Si(100)

Joonhee Jeong, Sungwon Lim and Kijung Yong ()
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Joonhee Jeong: Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (Postech), San 31, Hoyja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea
Sungwon Lim: Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (Postech), San 31, Hoyja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea
Kijung Yong: Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (Postech), San 31, Hoyja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea

Surface Review and Letters (SRL), 2003, vol. 10, issue 01, 121-125

Abstract: The thermal decomposition pathway and desorption of diethylamido of tetrakis(diethylamido)zirconium [TDEAZr, Zr(N(C2H5)2)4] on Si(100) were studied using temperature-programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS). During TPD experiments, ethylethyleneimine (C2H5N=CHCH3), diethylamine [NH(C2H5)2], acetonitrile (CH3CN), ethylene (C2H4) and hydrogen (H2) desorbed as the main decomposition products of diethylamido, which was chemisorbed on Si(100) through the scission of the zirconium–diethylamido bond in TDEAZr. After TPD runs, the formation of silicon carbide and silicon nitride was observed on the surface by XPS, indicating that a complete decomposition of diethylamido proceeded. This could be a reaction pathway of C, N incorporation in the thin film growth using TDEAZr as a Zr precursor.

Keywords: TPD; tetrakis(diethylamido)zirconium; thermal decomposition; Si(100) (search for similar items in EconPapers)
Date: 2003
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DOI: 10.1142/S0218625X03004706

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