RF-Sputtered MoS2Film Morphology and the Imperfection Nucleation Model

G. Jakovidis, I. M. Jamieson and A. Singh
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G. Jakovidis: School of Physics and Materials Engineering, Monash University, Victoria 3800, Australia
I. M. Jamieson: School of Physics and Materials Engineering, Monash University, Victoria 3800, Australia
A. Singh: Physics Department, The University of the South Pacific, Suva, Fiji

Surface Review and Letters (SRL), 2003, vol. 10, issue 02n03, 443-448

Abstract: RF-sputtered MoS2films revealing the characteristics of bulk type II orientation on GaAs are reported for the first time. It is found that RF power and temperature have a pronounced effect on film morphology. Type II bulk-oriented films are obtained with a combination of low RF power and high substrate temperature. The results on GaAs are successfully interpreted within the context of an extension to the imperfection nucleation model of film formation. Films deposited on glass display an unusual morphology consisting of two distinct phases. Such phases may be related to the presence of sodium in the glass that leads to chemical texturing via a sodium thio-molybdate phase.

Date: 2003
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DOI: 10.1142/S0218625X03004743

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