Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements

Y. Takeda, M. Tabuchi, H. Amano and I. Akasaki
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Y. Takeda: Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
M. Tabuchi: Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
H. Amano: Department of Materials Science and Engineering, High Tech Research Center, Meijo University, 501, 1-chome, Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan
I. Akasaki: Department of Materials Science and Engineering, High Tech Research Center, Meijo University, 501, 1-chome, Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan

Surface Review and Letters (SRL), 2003, vol. 10, issue 02n03, 537-541

Abstract: Crystalline and morphological quality of low-temperature (LT)-deposited and annealed AlN and GaN thin layers were investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements and atomic force microscope (AFM) observation. It was revealed that the LT-AlN layer was more uniform in terms of the crystalline structure and the layer thickness than the LT-GaN layer, before and after annealing. It suggests that LT-AlN is more suitable as a buffer layer between sapphire substrate and GaN.

Date: 2003
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DOI: 10.1142/S0218625X03004810

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