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Surface Ordering of P-rich InP(001): Hydrogen Stabilization vs Electron Correlation

P. H. Hahn () and W. G. Schmidt
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P. H. Hahn: Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena, Germany
W. G. Schmidt: Institut für Festkörpertheorie und Theoretische Optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena, Germany

Surface Review and Letters (SRL), 2003, vol. 10, issue 02n03, 163-167

Abstract: The influence of hydrogen on the reconstruction of InP(001) surfaces is studied byfirst-principlescalculations. One-monolayer phosphorus forming oppositely buckled dimers with one hydrogen adsorbed per dimer is energetically favored for a wide range of surface preparation conditions. The electronic structure and STM image calculated for this adsorbate geometry agree well with the experimental findings obtained after annealing of MOVPE-grown InP samples. The Si(001)-like surface ordering as well as the surface band gap of more than 1 eV, supposedly arising from electron correlation effects [Liet al.,Phys. Rev. Lett.82, 1879 (1999)], are naturally explained by the hydrogen-stabilized surface structure favored by the total-energy calculations.

Date: 2003
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DOI: 10.1142/S0218625X03004913

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