Microstructural Study of a Passivation Layer on GaAs: An Application of X-Ray Reflectivity Under Grazing Angles Using a Synchrotron Source

K. E. Crompton, T. R. Finlayson, C. Kirchner, M. Seitz and U. Klemradt
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K. E. Crompton: School of Physics and Materials Engineering, Monash University, Clayton, 3800, Australia
T. R. Finlayson: School of Physics and Materials Engineering, Monash University, Clayton, 3800, Australia
C. Kirchner: Sektion Physik and Center for NanoScience, Ludwig-Maximilians University, 80539 Munich, Germany
M. Seitz: Sektion Physik and Center for NanoScience, Ludwig-Maximilians University, 80539 Munich, Germany
U. Klemradt: Sektion Physik and Center for NanoScience, Ludwig-Maximilians University, 80539 Munich, Germany

Surface Review and Letters (SRL), 2003, vol. 10, issue 02n03, 373-379

Abstract: X-ray specular reflectivities of GaAs samples passivated with a thin film of (3-mercaptopropyl)-trimethoxysilane (MPT) have been studied using bending-magnet synchrotron radiation. Various preparation procedures covering etching the GaAs, MPT deposition and its baking have been investigated. An oxide film is always observed between the GaAs and MPT films. The microstructural parameters, such as film thickness, density and interfacial roughness (including the external surface), have been determined from appropriate modeling of the reflectivity. The surface roughness has been compared with a direct measurement using tapping-mode atomic force microscopy. The results are discussed with reference to the potential applications of GaAs as a biosensor.

Date: 2003
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DOI: 10.1142/S0218625X03004925

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