High-Resolution X-Ray Diffractometry Investigation of Interface Layers in GaN/AlN Structures Grown on Sapphire Substrates

Stephen Mudie, Konstantin Pavlov, Michael Morgan, Masao Tabuchi, Yoshikazu Takeda and James Hester
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Stephen Mudie: School of Physics and Materials Engineering, Monash University, Victoria 3800, Australia
Konstantin Pavlov: School of Physics and Materials Engineering, Monash University, Victoria 3800, Australia
Michael Morgan: School of Physics and Materials Engineering, Monash University, Victoria 3800, Australia
Masao Tabuchi: Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Yoshikazu Takeda: Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
James Hester: Australian Nuclear Science and Technology Organisation, PMB 1, Menai NSW 2234, Australia

Surface Review and Letters (SRL), 2003, vol. 10, issue 02n03, 513-517

Abstract: GaInN is an important wide band gap material with applications in short wavelength optoelectronic devices. The GaInN layer is often grown on a sapphire substrate, with low-temperature-deposited AlN and thick GaN used as buffer layers. The growth regime consists of many steps, each of which contributes to the overall properties of the device. The aim of our high-resolution X-ray diffraction experiments, conducted at the Photon Factory (Tsukuba, Japan), was to investigate the structural quality of the AlN buffer layer, which affects the final properties of the device. Reciprocal space mapping was used to study samples (having various layer thicknesses) from each stage of the growth process. Analysis of the experimental data provides parameters such as mosaic block dimensions and orientation, lattice strain distribution, and layer thickness.

Date: 2003
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DOI: 10.1142/S0218625X03005001

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