Influence of Substrate Miscut on the Island Formation Process inIn0.2Ga0.8As/GaAsMultilayers

E. Gartstein, D. Mogilyanski and D. Barlam
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E. Gartstein: Institute for Applied Research, POB 653, Ben-Gurion University, Beer-Sheva, 84105, Israel
D. Mogilyanski: Institute for Applied Research, POB 653, Ben-Gurion University, Beer-Sheva, 84105, Israel
D. Barlam: Institute for Applied Research, POB 653, Ben-Gurion University, Beer-Sheva, 84105, Israel

Surface Review and Letters (SRL), 2003, vol. 10, issue 02n03, 263-270

Abstract: LPOMVPE-grown In0.2Ga0.8As/GaAs multilayers on GaAs substrates with miscut values of 0°, 0.3° and 2° around the [100] azimuthal direction were investigated by employing X-ray diffraction techniques complemented by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The step-terrace structure evolving on the interfaces upon deposition strongly depends on the initial substrate morphology. The initiation of island nucleation, and both lateral and vertical ordering are related to the interfacial morphological parameters. Finite element analysis (FEA) is performed to elucidate the interplay between structural and strain relaxation processes.

Date: 2003
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DOI: 10.1142/S0218625X03005049

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