An STM Observation of the Initial Process of Graphitization at the${\rm 6H \mbox-SiC}(000{\bar 1})$Surface

M. Naitoh (), M. Kitada, S. Nishigaki, N. Toyama and F. Shoji
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M. Naitoh: Department of Electrical Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu 804-8550, Japan
M. Kitada: Department of Electrical Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu 804-8550, Japan
S. Nishigaki: Department of Electrical Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu 804-8550, Japan
N. Toyama: Department of Electrical Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu 804-8550, Japan
F. Shoji: Faculty of Engineering, Kyushu Kyoritsu University, Jiyugaoka, Yahatanishi, Kitakyushu 807-8585, Japan

Surface Review and Letters (SRL), 2003, vol. 10, issue 02n03, 473-477

Abstract: We applied scanning tunneling microscopy (STM) as well as low-energy electron diffraction (LEED) to analyze the initial process of graphitization at${\rm 6H \mbox-SiC}(000{\bar 1})$surfaces. After annealing a${\rm 6H \mbox-SiC}(000{\bar 1})$surface at 1200°C, there appeared many domains with a single graphite layer in the STM image. Each graphite domain was azimuthally disordered to each other. Many large and small domains with various periodicities were observed in the STM image taken after annealing the surface at temperatures higher than 1300°C. These STM images can be explained as Moiré patterns due to different combinations of two graphite layers. In a LEED pattern azimuthally rotated graphite 1 × 1 spots are observed together with the fundamental 6H-SiC(0001)(1 × 1) spots, in consistent with the STM result.

Date: 2003
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DOI: 10.1142/S0218625X03005165

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