Sulphur-Passivated GaAsInvestigation Using High Resolution X-Ray Diffractometry

Konstantin Pavlov, Ian Jamieson, Greg Jakovidis, Anatoly Petrakov and Vasily Punegov
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Konstantin Pavlov: School of Physics and Materials Engineering, PO Box 27, Monash University 3800, Australia
Ian Jamieson: School of Physics and Materials Engineering, PO Box 27, Monash University 3800, Australia
Greg Jakovidis: School of Physics and Materials Engineering, PO Box 27, Monash University 3800, Australia
Anatoly Petrakov: Department of Solid State Physics, Syktyvkar State University, Syktyvkar 167001, Russia
Vasily Punegov: Department of Solid State Physics, Syktyvkar State University, Syktyvkar 167001, Russia

Surface Review and Letters (SRL), 2003, vol. 10, issue 02n03, 533-536

Abstract: The growth of a MoS2layer on a GaAs(111) substrate produces a highly strained interface layer, which relaxes via generation of dislocations. Using high-resolution X-ray diffractometry in the triple-axis scheme we investigated this interfacial layer, which results from dipping an epi-ready GaAs wafer in ammonium sulphide, followed by deposition of an RF-sputtered MoS2layer. The dislocation density revealed from the measurements is of the 106cm-2. This suggests that high efficiency (~20%) MoS2/GaAs heterojunction photovoltaic devices are feasible.

Date: 2003
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DOI: 10.1142/S0218625X03005219

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