Initial Growth of Coon Cu{001} Studied with LEED I(V)

J. Sainio (), E. Alshamaileh, J. Lahtinen and C. J. Barnes
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J. Sainio: Laboratory of Physics, Helsinki University of Technology, PO Box 1100, 02015 HUT, Finland;
E. Alshamaileh: Plasma Research Laboratory, NCPST, School of Physical Sciences, Dublin City University, Dublin 9, Ireland;
J. Lahtinen: Laboratory of Physics, Helsinki University of Technology, PO Box 1100, 02015 HUT, Finland
C. J. Barnes: School of Chemical Sciences, Dublin City University, Dublin 9, Ireland

Surface Review and Letters (SRL), 2003, vol. 10, issue 04, 641-648

Abstract: The initial growth of Co deposited at room temperature on Cu{001} was studied with low energy electron diffraction (LEED) and temperature-programmed desorption (TPD). Measured I(V) spectra were compared with calculated spectra from several model structures, including substitutionally disordered alloys. The averaged T-matrix approximation (ATA) was used to model the random alloy layers. According to the I(V) analysis, alloying occurs in the first stages of the growth. TPD of CO indicates that both large areas of Co and areas of a surface alloy are already present at the lowest coverage. Both methods show that a transition to layer-by-layer growth occurs as the coverage increases.

Keywords: Low energy electron diffraction; cobalt; copper; single crystal epitaxy; temperature-programmed desorption (search for similar items in EconPapers)
Date: 2003
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DOI: 10.1142/S0218625X03005359

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