A RHEED Study of MBE Growth of ZnSeonGaAs(111)A-(2 × 2)

F. S. Gard, J. D. Riley, R. Leckey and B. F. Usher
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F. S. Gard: Department of Physics, La Trobe University, Vic. 3086, Australia;
J. D. Riley: Department of Physics, La Trobe University, Vic. 3086, Australia
R. Leckey: Department of Physics, La Trobe University, Vic. 3086, Australia
B. F. Usher: Department of Electronic Engineering, La Trobe University, Vic. 3086, Australia

Surface Review and Letters (SRL), 2003, vol. 10, issue 04, 669-675

Abstract: ZnSe epilayers have been grown under various Se/Zn atomic flux ratios in the range of 0.22–2.45 at a substrate temperature of 350°C on Zn pre-exposed GaAs (111) A surfaces. Real time reflection high energy electron diffraction (RHEED) observations have shown a transition from a two-dimensional (2D) to a three-dimensional (3D) growth mode. The transition time depends directly upon the growth rate. A detailed discussion is presented to explore the cause of this change in the growth mode.

Keywords: Molecular beam epitaxy; zinc selenide; gallium arsenide; RHEED; surface energy (search for similar items in EconPapers)
Date: 2003
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DOI: 10.1142/S0218625X03005384

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