Deposition and Characterization of High Dielectric Thin Films for Memory Device Application

Hyeong Joon Kim (), Ju Cheol Shin, Cheol Seong Hwang and Sang Yong No
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Hyeong Joon Kim: School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56-1 Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
Ju Cheol Shin: School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56-1 Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
Cheol Seong Hwang: School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56-1 Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
Sang Yong No: School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56-1 Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea

Surface Review and Letters (SRL), 2003, vol. 10, issue 04, 591-604

Abstract: (Pb,La)TiO3(PLT) andPb(Zr,Ti)O3(PZT) thin films were deposited onPt/SiO2/Sisubstrate by metal-organic chemical vapor deposition (MOCVD) using a solid delivery system. The domain configurations of the deposited PLT thin films were investigated, and the film with a columnar structure exhibited a very stable write/read operation for the domain memory application. Electrical properties of PLT, PZT and rf-sputter-deposited(Ba,Sr)TiO3(BST) thin films were measured, and their conduction mechanisms were analyzed. The composition and thickness uniformity of BST thin films deposited by the low temperature MOCVD method on a patterned wafer with 0.15 μm-diameter contact holes were investigated, and complete thickness and composition uniformity were obtained especially for the case of a dome-wall-type chamber with a wall temperature of 450°C.

Keywords: PLT; PZT; BST; MOCVD; high dielectric thin film (search for similar items in EconPapers)
Date: 2003
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DOI: 10.1142/S0218625X03005438

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