Study of Dry Oxidation of Aluminum Nitride on Si(111) Substrate Grown by Metalorganic Chemical Vapor Deposition

F. Wang (), Rongrong Zhang, X. Q. Xiu, D. Q. Lu, S. L. Gu, B. Shen, Y. Shi and Y. D. Zheng
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F. Wang: Department of Physics, Nanjing University, Nanjing 210093, China
X. Q. Xiu: Department of Physics, Nanjing University, Nanjing 210093, China
D. Q. Lu: Department of Physics, Nanjing University, Nanjing 210093, China
S. L. Gu: Department of Physics, Nanjing University, Nanjing 210093, China
B. Shen: Department of Physics, Nanjing University, Nanjing 210093, China
Y. Shi: Department of Physics, Nanjing University, Nanjing 210093, China
Y. D. Zheng: Department of Physics, Nanjing University, Nanjing 210093, China

Surface Review and Letters (SRL), 2003, vol. 10, issue 04, 625-628

Abstract: We have investigated the dry oxidation behavior of an AlN epilayer on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD) at different temperatures and different oxidation times through XRD analysis and scanning electron microscopy (SEM). The AlN epilayer has been completely oxidized into polycrystallineα-Al2O3after oxidation at 1100°C for 2 h. The ratio ofO2toN2introduced into the furnace has an influence on the structure ofα-Al2O3. There are onlyα-Al2O3(104), (113) diffraction peaks in the XRD curve if theO2:N2is lower than 0.2:1. At the temperature over 1100°C, the oxidation is initiated with a rapid oxidation process, followed by a relatively slow process. These two oxidation stages are respectively related to the interfacial reaction mechanism and the diffusion mechanism.

Date: 2003
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DOI: 10.1142/S0218625X03005463

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