STUDY OF THEC2H4/Si(100)-(2×1)INTERFACE BY DERIVATIVE PHOTOELECTRON HOLOGRAPHY

S. H. Xu, H. S. Wu (), S. Y. Tong, M. Keeffe, G. J. Lapeyre and E. Rotenberg
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S. H. Xu: Department of Physics, The University of Hong Kong, Hong Kong, China
H. S. Wu: Department of Physics, The University of Hong Kong, Hong Kong, China
S. Y. Tong: Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China
M. Keeffe: Physics Department, Montana State University, Bozeman, MT 59717, USA
G. J. Lapeyre: Physics Department, Montana State University, Bozeman, MT 59717, USA
E. Rotenberg: Advanced Light Source, LBNL, Berkeley, CA 94720, USA

Surface Review and Letters (SRL), 2003, vol. 10, issue 06, 925-932

Abstract: Thekderivative spectra (KDS) transform is used for construction of the three-dimensional atomic structure of theC2H4/Si(100)-(2×1)system from photoelectron diffraction data. The image function obtained by the KDS transform clearly observes the second-layer Si atoms and the C emitters apart from the first-layer Si atoms. The observations of the second-layer Si atoms and the C emitters make it easy to measure the C–C bond length correctly. Then a conclusive adsorption model — the di-σ model — for theC2H4/Si(100)-(2×1)system is established. In comparison with the KDS transform, the normal small-cone transform hardly measures the C–C bond length. The ability to observe more scatterers of a photoelectron emitter by the KDS transform expands the applicability of holographic imaging.

Keywords: Photoelectron holography; surface structure (search for similar items in EconPapers)
Date: 2003
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DOI: 10.1142/S0218625X03005670

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