COMPLEX BEHAVIORS AT SIMPLE SEMICONDUCTOR AND METAL/SEMICONDUCTOR SURFACES

María E. Dávila, José Avila, María Carmen Asensio and Guy Le Lay ()
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María E. Dávila: Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Cantoblanco, Madrid, Spain
José Avila: Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Cantoblanco, Madrid, Spain
María Carmen Asensio: Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Cantoblanco, Madrid, Spain
Guy Le Lay: Instituto de Ciencia de Materiales de Madrid (CSIC), 28049 Cantoblanco, Madrid, Spain

Surface Review and Letters (SRL), 2003, vol. 10, issue 06, 981-1008

Abstract: We present in this article a comprehensive review of the dynamical fluctuations in the atomic positions that may take place, even at very low temperatures, at the clean silicon or germanium (100) surfaces or at their (111) surfaces decorated with Sn or Ag adatoms. We also elucidate the intriguing, hitherto unexplained differences observed between the two, seemingly similar, Sn/Si(111) and Sn/Ge(111)$\sqrt{3} \times \sqrt{3}$surfaces. We also describe the surprising behaviors of silver ultrathin films grown on different semiconductor surfaces, displaying in certain cases a bcc phase, a one-dimensional quasicrystalline superstructure and/or well-defined quantum size effects.

Keywords: Metal–semiconductor interface; fluctuations; silicon; germanium; tin; silver (search for similar items in EconPapers)
Date: 2003
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DOI: 10.1142/S0218625X03005682

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